H5ANAG8NCMR-XNI vs H5ANAG8NAMR-UHC 对比

详细并排对比 H5ANAG8NCMR-XNI 出自 SK hynix 和 H5ANAG8NAMR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5ANAG8NCMR-XNI H5ANAG8NCMR-XNI - 16Gb DDR4 SDRAM 3200Mbps | SK Hynix

H5ANAG8NCMR-XNI - 16Gb DDR4 SDRAM 3200Mbps | SK Hynix

H5ANAG8NCMR-XNI ✓ 量产中
SK hynix
H5ANAG8NAMR-UHC H5ANAG8NAMR-UHC - 16Gb DDR4-2400 SDRAM 2Gx8 | SK Hynix

H5ANAG8NAMR-UHC - 16Gb DDR4-2400 SDRAM 2Gx8 | SK Hynix

H5ANAG8NAMR-UHC ✓ 量产中

规格对比

参数 H5ANAG8NCMR-XNI H5ANAG8NAMR-UHC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $4.15 $2.15
存储器类型 Volatile (DRAM) DDR4 SDRAM
Memory Format DDR4 SDRAM —
存储容量 16 Gb —
Memory Organization x8 —
接口 Parallel Parallel, DDR4
数据速率 3200 Mbps (DDR4-3200) DDR4-2400 (2400 MT/s)
Supply Voltage (VDD) 1.2 V —
封装 FBGA-78 FBGA-78
安装类型 Surface Mount Surface Mount
Packaging Tray —
Product Status Active —
Manufacturer SK Hynix SK Hynix
Technology CMOS DDR4 SDRAM —
RoHS 状态 [DATA_NEEDED: RoHS status] Compliant (lead-free FBGA package)
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Refresh [DATA_NEEDED: refresh rate] Self-refresh and auto-refresh (DDR4)
Density — 16 Gbit
存储组织 — 2G x 8
电源电压 — 1.2 V
Bank Group Architecture — DDR4 bank-group architecture
On-Die Termination (ODT) — Yes
MSL 等级 — [DATA_NEEDED: moisture sensitivity level]
Applications — Data storage, firmware boot, industrial controllers, computing modules

数据手册与资源

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