H5ANAG8NCR-PBC vs H5ANAG8NBJR-VKC 对比
详细并排对比 H5ANAG8NCR-PBC 出自 SK hynix 和 H5ANAG8NBJR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG8NCR-PBC | H5ANAG8NBJR-VKC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $9.50 | $8.60 |
| Memory Density | 16Gb (2 GB) | — |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储组织 | x8 | 2G x 8 |
| 电源电压 | 1.2 V (typical, DDR4 class) | 1.14 V to 1.26 V (VDDQ) |
| 接口类型 | Parallel, DDR4 (Double Data Rate 4) | — |
| 封装 | FBGA-78 (approximately 7.5 x 11 mm) | FBGA-78 |
| 安装类型 | Surface Mount | Surface Mount |
| Speed Grade Code | -PBC (SK hynix speed/temperature code; exact Mbps bin [DATA_NEEDED: speed bin value]) | — |
| Clock Frequency | [DATA_NEEDED: clock frequency] | 1.6 GHz (internal interface per distributor data) |
| CAS 延迟 | [DATA_NEEDED: CAS latency] | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| Bank Group Architecture | Yes (DDR4 bank groups) | — |
| On-Die Termination (ODT) | Yes (DDR4 standard feature) | — |
| Self-Refresh | Yes (DDR4 standard feature) | — |
| RoHS 状态 | Compliant (Lead-Free & Halogen-Free per SK hynix family datasheet) | Compliant, Lead-Free and Halogen-Free |
| Process Technology | CMOS | — |
| Application Class | Main memory (server, industrial, networking, PC) | — |
| Density | — | 16 Gbit |
| Speed Grade | — | DDR4-2666 (2666 Mbps/pin) |
| Standby Current | — | 30 mA (operating, per distributor listing) |
| Auto Self-Refresh | — | Yes |
| Data Mask Function | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| Asynchronous Reset | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Auto Precharge | — | Yes |
| Refresh Interval | — | [DATA_NEEDED: tREFI refresh interval] |