H5TC4G63CFR-H9J vs H5TC4G63CFR-XXI 对比

详细并排对比 H5TC4G63CFR-H9J 出自 SK hynix 和 H5TC4G63CFR-xxI 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5TC4G63CFR-H9J H5TC4G63CFR-H9J - 4Gb DDR3L SDRAM 96-Ball TFBGA | SK Hynix

H5TC4G63CFR-H9J - 4Gb DDR3L SDRAM 96-Ball TFBGA | SK Hynix

H5TC4G63CFR-H9J ✓ 量产中
SK hynix
H5TC4G63CFR-xxI H5TC4G63CFR-xxI - 4Gb DDR3L SDRAM | SK Hynix

H5TC4G63CFR-xxI - 4Gb DDR3L SDRAM | SK Hynix

H5TC4G63CFR-xxI ✓ 量产中

规格对比

参数 H5TC4G63CFR-H9J H5TC4G63CFR-xxI
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $6.00 $8.10
存储器类型 DDR3L SDRAM DDR3L SDRAM
Density 4Gb 4Gb
存储组织 256M x 16 512M x 8
Supply Voltage (VDD/VDDQ) 1.35V +0.100/-0.067V —
Speed Grade -H9 (1866 Mbps / PC3-14900) —
封装 96-ball TFBGA 78-ball FBGA
Number of Terminals 96 —
Temperature Grade Industrial —
Lead-Free Yes Yes
无卤 Yes Yes
RoHS Compliant Yes —
Clock Input Fully differential (CK, CK) —
Data Strobe Differential (DQS, DQS) —
On-Chip DLL Yes —
Data Mask (DM) Yes —
Supply Voltage (VDD) — 1.35V +0.100 / -0.067V
Supply Voltage (VDDQ) — 1.35V +0.100 / -0.067V
工作温度范围 — [DATA_NEEDED: operating temperature range]
RoHS — Compliant
数据速率 — [DATA_NEEDED: speed grade]
CAS 延迟 — [DATA_NEEDED: CAS latency]
Burst Length — 8 (with burst chop)
On-Die Termination — Yes
Refresh — Auto-refresh, self-refresh, TCSR

数据手册与资源

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