H5TC4G63CFR-XXJ vs MT41K256M16TW-107 对比

详细并排对比 H5TC4G63CFR-xxJ 出自 SK hynix 和 MT41K256M16TW-107 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5TC4G63CFR-xxJ H5TC4G63CFR-xxJ - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63CFR-xxJ - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63CFR-xxJ ✓ 量产中
Micron Technology
MT41K256M16TW-107 MT41K256M16TW-107 - 4Gb DDR3L SDRAM 933MHz | Micron

MT41K256M16TW-107 - 4Gb DDR3L SDRAM 933MHz | Micron

MT41K256M16TW-107 ✓ 量产中

规格对比

参数 H5TC4G63CFR-xxJ MT41K256M16TW-107
品牌 SK hynix Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $5.90 $14.10
存储器类型 DDR3L SDRAM DDR3L SDRAM
Density 4 Gb —
存储组织 256M x 16 256M x 16
Supply Voltage (VDD/VDDQ) 1.35V + 0.100 / - 0.067V —
Clock Input Fully differential (CK, CK#) —
Data Strobe Differential (DQS, DQS#) —
On-Chip DLL Yes —
DM Mask Yes —
封装 96-ball FBGA 96-FBGA (8x14 mm)
工作温度范围 0°C to 95°C (case) —
RoHS Compliant —
Lead-Free Yes —
无卤 Yes —
Speed Grade [DATA_NEEDED: speed grade for -xxJ suffix] —
CAS 延迟 [DATA_NEEDED: CAS latency options] —
Burst Length 8 and 4 (with burst chop) —
On-Die Termination Yes —
Refresh Auto-refresh and self-refresh —
存储容量 — 4 Gbit
接口 — Parallel
Clock Frequency — 933 MHz (DDR3L-1866)
Access Time — 20 ns
电源电压 — 1.35 V
数据总线宽度 — 16 bit
安装类型 — Surface Mount
工作温度 — 0C to +95C (commercial :P grade)
Auto Self-Refresh — Yes
Auto Precharge — Yes
Asynchronous Reset — Yes
Data Mask — Yes
Write Leveling — Yes
Dynamic On-Die Termination — Yes
ZQ Calibration — Yes
RoHS 状态 — [DATA_NEEDED: RoHS status]
MSL 等级 — [DATA_NEEDED: MSL level]

数据手册与资源

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