IAUC100N04S6N015ATMA1 vs IAUC60N06S5L073ATMA1 对比

详细并排对比 IAUC100N04S6N015ATMA1 出自 Infineon 和 IAUC60N06S5L073ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC100N04S6N015ATMA1 IAUC100N04S6N015ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6N015ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6N015ATMA1 ✓ 量产中
Infineon
IAUC60N06S5L073ATMA1 IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon

IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon

IAUC60N06S5L073ATMA1 ✓ 量产中

规格对比

参数 IAUC100N04S6N015ATMA1 IAUC60N06S5L073ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.78 $0.41
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-6 40V —
Technology N-Channel Trench MOSFET Trench (OptiMOS 5)
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D @ T_C=25C) 100 A —
Power Dissipation (P_D @ T_C=25C) 100 W —
R_DS(on) max @ V_GS=10V 1.5 mΩ (typical, per Infineon product page) —
Gate-Source Voltage (V_GS) max ±20 V —
工作温度范围 -55 C to +175 C (junction, typical) -55C to +175C
封装 PG-TDSON-8 (SSO8) 5x6 mm PG-TDSON-8-33 (5x6 mm)
安装类型 Surface Mount Surface Mount
MSL 等级 1 (unlimited floor life) [DATA_NEEDED: MSL level]
Automotive Qualification AEC-Q101 —
RoHS Compliance Compliant —
Lead-Free Yes —
Series — OptiMOS 5
晶体管类型 — N-Channel MOSFET
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tj — 60 A
On-Resistance RDS(on) max — 7.3 mΩ
Total Gate Charge (QG) — 17.4 nC
Power Dissipation (PD) at Tc — 52 W
引脚数 — 8
Configuration — Single N-Channel
Qualification — AEC-Q101 automotive grade
RoHS 状态 — Compliant
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typical]
Thermal Resistance RθJA — [DATA_NEEDED: thermal resistance junction-to-ambient]

数据手册与资源

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