IAUC100N10S5L054ATMA1 vs IAUC120N06S5L015ATMA1 对比

详细并排对比 IAUC100N10S5L054ATMA1 出自 Infineon 和 IAUC120N06S5L015ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC100N10S5L054ATMA1 IAUC100N10S5L054ATMA1 - 100V 5.4mΩ N-Ch MOSFET | Infineon

IAUC100N10S5L054ATMA1 - 100V 5.4mΩ N-Ch MOSFET | Infineon

IAUC100N10S5L054ATMA1 ✓ 量产中
Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ 量产中

规格对比

参数 IAUC100N10S5L054ATMA1 IAUC120N06S5L015ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.92 $0.92
Manufacturer Infineon Technologies —
Series OptiMOS 5 (IAUC automotive family) —
晶体管类型 N-Channel MOSFET —
Drain-to-Source Voltage (V_DS) 100 V —
Gate-to-Source Voltage (V_GS) [DATA_NEEDED: max V_GS value] —
Continuous Drain Current (I_D, Tj) 101 A —
Power Dissipation (P_D, Tc) 130 W —
R_DS(on) max at V_GS=10V 5.4 mΩ —
工作温度范围 -55°C to +175°C -55C to +175C (Tj)
封装 PG-TDSON-8-34 (surface mount) PG-TDSON-8-43 (Surface Mount)
安装类型 Surface Mount Surface Mount (exposed pad)
Qualification AEC-Q101 (automotive) —
Technology OptiMOS 5 trench N-Channel MOSFET (OptiMOS 5)
MSL 等级 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
RoHS 状态 Compliant Compliant
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, Tc=25C) — 235 A
On-Resistance RDS(on) max (VGS=10 V) — 1.5 mΩ
Gate Charge (Qg, typ) — 88 nC
Power Dissipation (PD, Tc=25C) — 167 W
Automotive Qualification — AEC-Q101 qualified
Gate-Source Voltage (VGS) max — ±20 V
Drain-Source On-State Resistance Test Conditions — VGS = 10 V, ID = 50 A
Typical Application — Automotive DC-DC, battery switches, motor drives

数据手册与资源

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