IAUC120N04S6L012ATMA1 vs IAUC60N04S6N031HATMA1 对比
详细并排对比 IAUC120N04S6L012ATMA1 出自 Infineon 和 IAUC60N04S6N031HATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUC120N04S6L012ATMA1 | IAUC60N04S6N031HATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.21 | $0.95 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 40V | IAUC (Integrated Automotive Half-Bridge) |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC | 120 A | — |
| Pulsed Drain Current (IDM) | 480 A | — |
| On-State Resistance (RDS(on)) at 10V VGS | 1.2 mΩ (typ) | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at 20V VGS] | — |
| Power Dissipation (PD) at TC | 115 W | — |
| 工作温度范围 | -55 °C to +175 °C (junction) | -55 °C to +175 °C (Tj) |
| 封装 | PG-TDSON-8 (TDSON-8, surface mount with exposed pad) | PG-TDSON-8-56 (5 mm x 6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| MSL 等级 | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS 状态 | Compliant | Compliant |
| Delivery Form | Tape & Reel | — |
| Process Technology | — | OptiMOS 6 40V |
| Configuration | — | Half-Bridge (2 N-Channel MOSFETs) |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, Tj) | — | 60 A |
| Power Dissipation (P_D, Tc=25C) | — | 75 W |
| R_DS(on) at VGS=10V | — | 3.1 mΩ |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| 引脚数量 | — | 8 |