IAUC60N04S6N031HATMA1 vs BSZ024N04LS6ATMA1 对比
详细并排对比 IAUC60N04S6N031HATMA1 出自 Infineon 和 BSZ024N04LS6ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUC60N04S6N031HATMA1 | BSZ024N04LS6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.95 | $0.46 |
| Manufacturer | Infineon Technologies | — |
| Part Family | IAUC (Integrated Automotive Half-Bridge) | — |
| Process Technology | OptiMOS 6 40V | — |
| Configuration | Half-Bridge (2 N-Channel MOSFETs) | — |
| Drain-Source Voltage (V_DS) | 40 V | 40 V |
| Continuous Drain Current (I_D, Tj) | 60 A | — |
| Power Dissipation (P_D, Tc=25C) | 75 W | — |
| R_DS(on) at VGS=10V | 3.1 mΩ | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| 工作温度范围 | -55 °C to +175 °C (Tj) | — |
| 封装 | PG-TDSON-8-56 (5 mm x 6 mm) | PG-TSDSON-8-FL (3.3 mm x 3.3 mm) |
| 安装类型 | Surface Mount | Surface Mount, top-side drain pad |
| 引脚数量 | 8 | — |
| Automotive Qualification | AEC-Q101 | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| 晶体管类型 | — | N-Channel MOSFET |
| Technology | — | OptiMOS 6 (shielded-gate trench) |
| Continuous Drain Current (I_D, Ta) | — | 24 A |
| Continuous Drain Current (I_D, Tc) | — | 40 A |
| Pulsed Drain Current (I_DM) | — | 130 A |
| R_DS(on) Max @ V_GS=10V | — | 2.4 mΩ |
| R_DS(on) Max @ V_GS=4.5V | — | [DATA_NEEDED: R_DS(on) at 4.5V] |
| Gate Threshold Voltage (V_GS(th)) | — | 2.3 V (typical) |
| Total Gate Charge (Q_g) @ V_GS=10V | — | 25 nC |
| Input Capacitance (C_iss) | — | 1.8 nF |
| Output Capacitance (C_oss) | — | 19 pF |
| Power Dissipation (P_D, Ta) | — | 2.5 W |
| Power Dissipation (P_D, Tc) | — | 75 W |
| 工作结温 | — | -55°C to +175°C |