IAUC60N04S6N044ATMA1 vs IAUC60N04S6N031HATMA1 对比
详细并排对比 IAUC60N04S6N044ATMA1 出自 Infineon 和 IAUC60N04S6N031HATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 ✓ 量产中
规格对比
| 参数 | IAUC60N04S6N044ATMA1 | IAUC60N04S6N031HATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.98 | $0.95 |
| Technology | OptiMOS-6 N-channel trench MOSFET | — |
| Drain-Source Voltage (V_DS) | 40 V | 40 V |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | — |
| Continuous Drain Current (I_D) at Tc=25°C | 60 A | — |
| Continuous Drain Current (I_D) at Tc=100°C | [DATA_NEEDED: pulsed/current derated value] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance R_DS(on) max @ V_GS=10V | 4.4 mΩ | — |
| On-Resistance R_DS(on) max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: typical gate charge] | — |
| Power Dissipation (P_D) at Tc=25°C | 42 W | — |
| 工作结温 | -55°C to +175°C | — |
| 封装 | PG-TDSON-8 (5x6 mm) with exposed pad | PG-TDSON-8-56 (5 mm x 6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| Automotive Qualification | AEC-Q101 qualified (IAUC prefix) | AEC-Q101 |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | IAUC (Integrated Automotive Half-Bridge) |
| Process Technology | — | OptiMOS 6 40V |
| Configuration | — | Half-Bridge (2 N-Channel MOSFETs) |
| Continuous Drain Current (I_D, Tj) | — | 60 A |
| Power Dissipation (P_D, Tc=25C) | — | 75 W |
| R_DS(on) at VGS=10V | — | 3.1 mΩ |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| 工作温度范围 | — | -55 °C to +175 °C (Tj) |
| 引脚数量 | — | 8 |