IAUC60N06S5L073ATMA1 vs IAUZ30N08S5N186ATMA1 对比
详细并排对比 IAUC60N06S5L073ATMA1 出自 Infineon 和 IAUZ30N08S5N186ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUC60N06S5L073ATMA1 | IAUZ30N08S5N186ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.41 | $0.48 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tj | 60 A | — |
| On-Resistance RDS(on) max | 7.3 mΩ | — |
| Total Gate Charge (QG) | 17.4 nC | — |
| Power Dissipation (PD) at Tc | 52 W | — |
| 封装 | PG-TDSON-8-33 (5x6 mm) | PG-TSDSON-8-32 (5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +175C | -55 °C to +175 °C (automotive) |
| Technology | Trench (OptiMOS 5) | OptiMOS 5 N-Channel Power MOSFET (trench) |
| 引脚数 | 8 | — |
| Configuration | Single N-Channel | — |
| Qualification | AEC-Q101 automotive grade | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Thermal Resistance RθJA | [DATA_NEEDED: thermal resistance junction-to-ambient] | — |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tj) | — | 30 A |
| Power Dissipation (PD, Tc) | — | 41 W |
| On-State Resistance (RDS(on)) | — | 18.6 mΩ (typical, VGS = 10 V) |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg at VGS=10V] |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |