IAUC90N10S5N062ATMA1 vs IAUT300N10S5N015ATMA1 对比

详细并排对比 IAUC90N10S5N062ATMA1 出自 Infineon 和 IAUT300N10S5N015ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC90N10S5N062ATMA1 IAUC90N10S5N062ATMA1 - 100V 90A 6.2mOhm OptiMOS 5 MOSFET | Infineon

IAUC90N10S5N062ATMA1 - 100V 90A 6.2mOhm OptiMOS 5 MOSFET | Infineon

IAUC90N10S5N062ATMA1 ✓ 量产中
Infineon
IAUT300N10S5N015ATMA1 IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon

IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon

IAUT300N10S5N015ATMA1 ✓ 量产中

规格对比

参数 IAUC90N10S5N062ATMA1 IAUT300N10S5N015ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.95 $4.10
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tc=25C 90 A —
Maximum On-Resistance RDS(on) max at VGS=10V 6.2 mOhm —
Gate-Source Threshold Voltage VGS(th) typ 3.8 V —
Maximum Power Dissipation (Tc=25C) 115 W —
工作结温 -55 C to +175 C —
封装 PG-TDSON-8-34 (TDSON-8) PG-HSOF-8-1 (HSOF-8)
安装类型 Surface Mount Surface Mount
Technology Trench MOSFET (OptiMOS 5, Generation 5) OptiMOS 5 N-Channel Power MOSFET
Avalanche Rated Yes (100% avalanche tested) —
MSL (Moisture Sensitivity Level) MSL1 (260 C peak reflow) —
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
RoHS / Green Product Yes (RoHS compliant, Green Product) —
Lead-Free Yes —
Continuous Drain Current (ID, Tc) — 300 A
Power Dissipation (PD, Tc) — 375 W
RDS(on) (typ, VGS=10V) — 1.5 mΩ
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th), typ) — [DATA_NEEDED: VGS(th) value]
工作温度范围 — -55°C to +175°C
MSL 等级 — MSL1 (260°C peak reflow)
RoHS Compliance — RoHS compliant (Green product)
Avalanche Tested — 100% avalanche tested
Polarity — N-Channel
Mode of Operation — Enhancement-mode

数据手册与资源

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