IAUCN04S7L019ATMA1 vs BSC0901NSATMA1 对比

详细并排对比 IAUCN04S7L019ATMA1 出自 Infineon 和 BSC0901NSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN04S7L019ATMA1 IAUCN04S7L019ATMA1 - 40V 1.91mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7L019ATMA1 - 40V 1.91mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7L019ATMA1 ✓ 量产中

规格对比

参数 IAUCN04S7L019ATMA1 BSC0901NSATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.48 $0.78
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ 7 —
FET Type N-Channel —
Drain-to-Source Voltage (V<sub>DS</sub>) 40 V —
Continuous Drain Current (I<sub>D</sub>) 120 A —
R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V 1.91 mΩ —
Gate Threshold Voltage (V<sub>GS(th)</sub>) [DATA_NEEDED: Vgs(th) typical/max value] —
Gate Charge (Q<sub>g</sub>) [DATA_NEEDED: Qg total/nominal value] —
封装 PG-TDSON-8-33 TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm
安装类型 Surface Mount Surface Mount
工作温度 -55°C to +175°C (junction) —
Power Dissipation (P<sub>D</sub>) [DATA_NEEDED: Pd max at 25C] —
热阻,结到环境 [DATA_NEEDED: RthJA value] —
Automotive Qualification AEC-Q101 qualified —
RoHS 状态 Compliant Compliant
MSL 等级 1 —
Packaging Tape & Reel (13-inch reel) —
Standard Pack Quantity 5000 pieces —
Ordering Code Suffix ATMA1 (Tape & Reel 13") —
Part Family — OptiMOS 30V
Technology — N-Channel Trench MOSFET (OptiMOS)
Drain-to-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at Tc — 100 A
Continuous Drain Current (ID) at Ta — 28 A
On-State Resistance RDS(on) Max at VGS=10V — 1.9 mOhm
On-State Resistance RDS(on) Typ at VGS=10V — [DATA_NEEDED: RDS(on) typical]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg total]
Avalanche Energy (EAS) — 80 mJ
Power Dissipation (PD) at Tc — 69 W
Power Dissipation (PD) at Ta — 2.5 W
工作温度范围 — -55C to +150C
湿敏等级(MSL) — 1
Built-in Body Diode — Yes
Configuration — Single N-Channel with Built-in Diode

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