IAUCN04S7L019ATMA1 vs IAUC60N04S6L039ATMA1 对比

详细并排对比 IAUCN04S7L019ATMA1 出自 Infineon 和 IAUC60N04S6L039ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN04S7L019ATMA1 IAUCN04S7L019ATMA1 - 40V 1.91mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7L019ATMA1 - 40V 1.91mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7L019ATMA1 ✓ 量产中
Infineon
IAUC60N04S6L039ATMA1 IAUC60N04S6L039ATMA1 - 40V 60A OptiMOS 6 MOSFET | Infineon

IAUC60N04S6L039ATMA1 - 40V 60A OptiMOS 6 MOSFET | Infineon

IAUC60N04S6L039ATMA1 ✓ 量产中

规格对比

参数 IAUCN04S7L019ATMA1 IAUC60N04S6L039ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.48 $0.72
Manufacturer Infineon Technologies —
Series OptiMOS™ 7 —
FET Type N-Channel N-Channel
Drain-to-Source Voltage (V<sub>DS</sub>) 40 V —
Continuous Drain Current (I<sub>D</sub>) 120 A —
R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V 1.91 mΩ —
Gate Threshold Voltage (V<sub>GS(th)</sub>) [DATA_NEEDED: Vgs(th) typical/max value] —
Gate Charge (Q<sub>g</sub>) [DATA_NEEDED: Qg total/nominal value] —
封装 PG-TDSON-8-33 PG-TDSON-8 (SSO8) 5x6 mm
安装类型 Surface Mount Surface Mount
工作温度 -55°C to +175°C (junction) —
Power Dissipation (P<sub>D</sub>) [DATA_NEEDED: Pd max at 25C] —
热阻,结到环境 [DATA_NEEDED: RthJA value] —
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
RoHS 状态 Compliant Compliant
MSL 等级 1 1 (per JEDEC J-STD-020)
Packaging Tape & Reel (13-inch reel) —
Standard Pack Quantity 5000 pieces —
Ordering Code Suffix ATMA1 (Tape & Reel 13") —
Technology — OptiMOS 6 (trench)
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D, T_C=25C) — 60 A
Pulsed Drain Current (I_DM) — 240 A
R_DS(on) max @ V_GS=10V — 3.9 milliohm
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Q_G) — [DATA_NEEDED: total gate charge]
Power Dissipation (P_D) — 42 W
工作结温 — -55C to +175C
Avalanche Rated — Yes (100% avalanche tested)

数据手册与资源

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