IAUCN04S7L042GATMA1 vs IAUCN04S7N015GATMA1 对比

详细并排对比 IAUCN04S7L042GATMA1 出自 Infineon 和 IAUCN04S7N015GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN04S7N015GATMA1 IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 ✓ 量产中

规格对比

参数 IAUCN04S7L042GATMA1 IAUCN04S7N015GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.86 $2.21
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 40V OptiMOS 7
Technology Trench N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tj) 77 A —
Maximum Power Dissipation (PD, Tc) 50 W —
封装 PG-THSOG-4 (SSO4G 5x6) leaded surface mount PG-THSOG-4-1 (SSO4G 5x6) surface mount
安装类型 Surface Mount (IMS substrate / FR4 with thermal vias) Surface Mount (IMS-compatible source-down)
工作温度范围 -55C to +175C (Tj) —
Polarity / Channel Type N-Channel enhancement mode —
Automotive Qualified Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) —
RoHS 状态 Compliant Compliant
MSL 等级 1 1 (per JEDEC J-STD-020)
Packing Tape & Reel (per -ATMA1 suffix) —
Target Substrate IMS substrate and legacy FR4 designs —
On-State Resistance RDS(on) [DATA_NEEDED: RDS(on) max @ VGS=10V] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg @ VGS=10V] —
Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D) — 165 A (Tc)
Power Dissipation (P_D) — 96 W (Tc)
R_DS(on) max — 1.53 mΩ at V_GS=10 V
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS max]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical]
工作结温 — -55C to +175C
Automotive Qualification — AEC-Q101 qualified
Total Gate Charge (Q_G) — [DATA_NEEDED: total gate charge]

数据手册与资源

浏览全部产品 创建 BOM 获取报价