IAUCN04S7N027GATMA1 vs IAUCN04S7N006TATMA1 对比
详细并排对比 IAUCN04S7N027GATMA1 出自 Infineon 和 IAUCN04S7N006TATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUCN04S7N027GATMA1 | IAUCN04S7N006TATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.72 | $2.66 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (Vds max) | 40 V | — |
| Continuous Drain Current (Id) | 117 A | — |
| On-Resistance (Rds(on) max) | 2.67 mOhm | — |
| Power Dissipation (Pd) | 70 W (Tc) | — |
| 封装 / 外壳 | PG-THSOG-4-1 (SSO4G 5x6) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Qualification | Automotive | — |
| 工作温度范围 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Tj min/max] |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | — |
| Gate-Source Voltage Max (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL] | [DATA_NEEDED: MSL rating] |
| Substrate Compatibility | IMS substrates and legacy FR-4 | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, T_j) | — | 425 A |
| Power Dissipation (P_D, T_C) | — | 205 W |
| R_DS(on) (typ, V_GS=10V) | — | 0.63 mΩ |
| Technology | — | OptiMOS 7 (shielded-gate trench) |
| 封装 | — | PG-LHDSO-10-3 (10-LSOP, 5.30 mm width, exposed pad) |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min/max] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G at V_GS=10V] |
| Automotive Grade | — | Yes (Infineon automotive MOSFET line) |
| Lead-Free | — | Yes |