IAUCN04S7N037GATMA1 vs IAUC41N06S5N102ATMA1 对比

详细并排对比 IAUCN04S7N037GATMA1 出自 Infineon 和 IAUC41N06S5N102ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN04S7N037GATMA1 IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN04S7N037GATMA1 ✓ 量产中
Infineon
IAUC41N06S5N102ATMA1 IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon

IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon

IAUC41N06S5N102ATMA1 ✓ 量产中

规格对比

参数 IAUCN04S7N037GATMA1 IAUC41N06S5N102ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.89 $0.58
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 —
Technology Trench MOSFET, N-Channel —
Drain-Source Voltage (VDS) 40 V 60 V
Continuous Drain Current (ID) at Tj 91 A —
On-State Resistance RDS(on) typical 3.65 mΩ at VGS = 10 V —
Power Dissipation (PD) at Tc 57 W —
封装 SSO4G 5x6 mm² (PG-THSOG-4-1) PG-TDSON-8-33 (SSO8) Surface Mount
安装类型 Surface Mount (IMS substrate attach compatible) Surface Mount
Channel Type N-Channel —
Operating Mode Enhancement —
Automotive Qualification AEC-Q101 AEC-Q101 (per Infineon automotive MOSFET family)
RoHS 状态 Compliant Compliant
MSL 等级 [DATA_NEEDED: MSL level] —
工作温度范围 [DATA_NEEDED: junction/ambient temperature limits] -55C to +175C (junction)
Gate Charge (Qg) typical [DATA_NEEDED: total gate charge] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/range] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Part Family — OptiMOS 5 Power-Transistor
晶体管类型 — N-Channel MOSFET
Continuous Drain Current (ID, Tc) — 47 A (Tj)
Power Dissipation (PD, Tc=25C) — 42 W
On-Resistance (RDS(on)) — 10.2 mΩ at VGS=10 V, ID=20 A
Gate-Source Threshold (VGS(th)) — 3.4 V (typical)
Total Gate Charge (QG) — 12.5 nC
Channel Polarity — N-Channel (single)

数据手册与资源

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