IAUCN08S7N024TATMA1 vs IAUCN10S7L290TATMA1 对比

详细并排对比 IAUCN08S7N024TATMA1 出自 Infineon 和 IAUCN10S7L290TATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN08S7N024TATMA1 IAUCN08S7N024TATMA1 - 80V 2.44mΩ OptiMOS 7 Auto MOSFET | Infineon

IAUCN08S7N024TATMA1 - 80V 2.44mΩ OptiMOS 7 Auto MOSFET | Infineon

IAUCN08S7N024TATMA1 ✓ 量产中
Infineon
IAUCN10S7L290TATMA1 IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon

IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon

IAUCN10S7L290TATMA1 ✓ 量产中

规格对比

参数 IAUCN08S7N024TATMA1 IAUCN10S7L290TATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.45 $0.36
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 —
FET Type N-Channel —
Technology MOSFET (Metal Oxide Semiconductor) —
Drain-Source Voltage (Vds) 80 V —
Continuous Drain Current (Id) at Tj 165 A —
Power Dissipation (Pd) at Tc 157 W —
Rds(on) Max at Vgs=10V 2.44 mOhm —
封装 / 外壳 PG-LHDSO-10-1 (SSO10T, 5x7 mm²) —
安装类型 Surface Mount Surface Mount
Cooling Top-side cooled —
工作温度范围 [DATA_NEEDED: operating temperature range] —
Automotive Qualification AEC-Q101 AEC-Q100 qualified
RoHS 状态 Compliant —
Gate Threshold (Vgs(th)) [DATA_NEEDED: Vgs(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] [DATA_NEEDED: Qg typical]
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typ] —
Product Family — OptiMOS™ 7
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TC=25°C — 27 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulse rating]
On-Resistance RDS(on) max @ VGS=10V — 28.6 mΩ
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5 V]
Power Dissipation (PD) at TC=25°C — 45 W
工作结温 — -55 °C to +175 °C
封装 — PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled
MSL 等级 — 1 (per JEDEC J-STD-020)
RoHS Compliance — Compliant
Lead-Free — Yes
Avalanche Rated — Yes
ESD Protection — HBM Class 1C (per Infineon datasheet)

数据手册与资源

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