IAUCN08S7N034ATMA1 vs IAUCN08S7N024ATMA1 对比

详细并排对比 IAUCN08S7N034ATMA1 出自 Infineon 和 IAUCN08S7N024ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN08S7N034ATMA1 IAUCN08S7N034ATMA1 - 80V 120A 3.4mΩ Automotive MOSFET | Infineon

IAUCN08S7N034ATMA1 - 80V 120A 3.4mΩ Automotive MOSFET | Infineon

IAUCN08S7N034ATMA1 ✓ 量产中
Infineon
IAUCN08S7N024ATMA1 IAUCN08S7N024ATMA1 - 80V 165A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN08S7N024ATMA1 - 80V 165A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN08S7N024ATMA1 ✓ 量产中

规格对比

参数 IAUCN08S7N034ATMA1 IAUCN08S7N024ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.48 $0.89
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ 7 Automotive OptiMOS 7 (80 V)
晶体管类型 N-Channel MOSFET —
Drain-Source Voltage (V<sub>DS</sub>) 80 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) 120 A —
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V 3.4 mΩ —
Gate-Source Threshold (V<sub>GS(th)</sub>) 3.2 V (typ) —
Total Gate Charge (Q<sub>G</sub>) 45.8 nC @ V<sub>GS</sub>=10 V —
Input Capacitance (C<sub>iss</sub>) 1.27 nF —
Output Capacitance (C<sub>oss</sub>) 3.115 nF —
Reverse Transfer Capacitance (C<sub>rss</sub>) 23 pF —
Power Dissipation (P<sub>D</sub>) 118 W —
工作结温 -55°C to +175°C —
封装 PG-TDSON-8-34 (TDSON EP) PG-TDSON-8-34 (8-pin, exposed pad)
安装类型 Surface Mount Surface Mount
MSL 等级 MSL 1 (unlimited floor life) [DATA_NEEDED: MSL rating]
Automotive Qualification AEC-Q101 AEC-Q101
RoHS 状态 Compliant —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at TC=25C — 165 A
Drain-Source On-Resistance (RDS(on)) max — 2.4 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Technology — OptiMOS 7 trench
工作温度范围 — -55C to +175C (typical automotive)
功耗(Ptot) — [DATA_NEEDED: Ptot @ TC=25C]
RoHS Compliance — Compliant
Typical Application — 48 V automotive DC-DC, motor drive, load switch

数据手册与资源

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