IAUTN04S7N003ATMA1 vs IAUCN04S7N027GATMA1 对比

详细并排对比 IAUTN04S7N003ATMA1 出自 Infineon 和 IAUCN04S7N027GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN04S7N027GATMA1 IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6

IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6

IAUCN04S7N027GATMA1 ✓ 量产中

规格对比

参数 IAUTN04S7N003ATMA1 IAUCN04S7N027GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.42 $0.72
Technology OptiMOS 7 N-Channel Trench MOSFET —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at Tj 350 A —
Power Dissipation (PD) at Tc=25°C 357 W —
RDS(on) max at VGS=10V 0.24 mOhm (typical) —
Gate-Source Voltage (VGS) max ±20 V —
Avalanche Single-Pulse Current [DATA_NEEDED: IAS] —
Body Diode Continuous Forward Current 350 A (Tj = 25 °C) —
Body Diode Pulse Current 3510 A (tp = 100 µs, Tj = 25 °C) —
Body Diode Forward Voltage (VSD) 0.95 V max (0.8 V typ) at IS = 100 A —
Reverse Recovery Time (trr) 83 ns typical / 125 ns max —
Reverse Recovery Charge (Qrr) 126 nC typical / 252 nC max —
工作温度范围 -55 °C to +175 °C (Tj) [DATA_NEEDED: operating temperature range]
封装 PG-HSOF-8-9 (TOLL, 10x12 mm, surface mount) —
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
RoHS 状态 Compliant Compliant
MSL 等级 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL]
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7
Channel Type — N-Channel
Drain-Source Voltage (Vds max) — 40 V
Continuous Drain Current (Id) — 117 A
On-Resistance (Rds(on) max) — 2.67 mOhm
Power Dissipation (Pd) — 70 W (Tc)
封装 / 外壳 — PG-THSOG-4-1 (SSO4G 5x6)
Qualification — Automotive
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th)]
Gate-Source Voltage Max (Vgs) — [DATA_NEEDED: Vgs max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Substrate Compatibility — IMS substrates and legacy FR-4

数据手册与资源

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