IAUZN04S7L030ATMA1 vs IAUC120N04S6L012ATMA1 对比

详细并排对比 IAUZN04S7L030ATMA1 出自 Infineon 和 IAUC120N04S6L012ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUZN04S7L030ATMA1 IAUZN04S7L030ATMA1 - 40V 3.05mΩ OptiMOS 7 N-MOSFET | Infineon

IAUZN04S7L030ATMA1 - 40V 3.05mΩ OptiMOS 7 N-MOSFET | Infineon

IAUZN04S7L030ATMA1 ✓ 量产中
Infineon
IAUC120N04S6L012ATMA1 IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon

IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon

IAUC120N04S6L012ATMA1 ✓ 量产中

规格对比

参数 IAUZN04S7L030ATMA1 IAUC120N04S6L012ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.36 $1.21
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tc=25°C) 60 A —
Pulsed Drain Current (IDM, Tj) 100 A —
On-State Resistance (RDS(on), VGS=10V max) 3.05 mΩ —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] [DATA_NEEDED: Qg at 20V VGS]
Power Dissipation (PD, Tc=25°C) 58 W —
Operating Junction Temperature (Tj) -55C to +175C —
Technology Family OptiMOS-7 —
Channel Type N-Channel —
封装 PG-TSDSON-8-44 (S3O8) 3x3 mm² PG-TDSON-8 (TDSON-8, surface mount with exposed pad)
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (Automotive OptiMOS) AEC-Q101 qualified
RoHS Compliance Compliant —
MSL 等级 [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Manufacturer — Infineon Technologies
Part Family — OptiMOS 6 40V
晶体管类型 — N-Channel MOSFET
Continuous Drain Current (ID) at TC — 120 A
Pulsed Drain Current (IDM) — 480 A
On-State Resistance (RDS(on)) at 10V VGS — 1.2 mΩ (typ)
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Power Dissipation (PD) at TC — 115 W
工作温度范围 — -55 °C to +175 °C (junction)
RoHS 状态 — Compliant
Delivery Form — Tape & Reel

数据手册与资源

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