IAUZN04S7L030ATMA1 vs IAUC60N04S6N031HATMA1 对比

详细并排对比 IAUZN04S7L030ATMA1 出自 Infineon 和 IAUC60N04S6N031HATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUZN04S7L030ATMA1 IAUZN04S7L030ATMA1 - 40V 3.05mΩ OptiMOS 7 N-MOSFET | Infineon

IAUZN04S7L030ATMA1 - 40V 3.05mΩ OptiMOS 7 N-MOSFET | Infineon

IAUZN04S7L030ATMA1 ✓ 量产中
Infineon
IAUC60N04S6N031HATMA1 IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon

IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon

IAUC60N04S6N031HATMA1 ✓ 量产中

规格对比

参数 IAUZN04S7L030ATMA1 IAUC60N04S6N031HATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.36 $0.95
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc=25°C) 60 A —
Pulsed Drain Current (IDM, Tj) 100 A —
On-State Resistance (RDS(on), VGS=10V max) 3.05 mΩ —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD, Tc=25°C) 58 W —
Operating Junction Temperature (Tj) -55C to +175C —
Technology Family OptiMOS-7 —
Channel Type N-Channel —
封装 PG-TSDSON-8-44 (S3O8) 3x3 mm² PG-TDSON-8-56 (5 mm x 6 mm)
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (Automotive OptiMOS) AEC-Q101
RoHS Compliance Compliant —
MSL 等级 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Manufacturer — Infineon Technologies
Part Family — IAUC (Integrated Automotive Half-Bridge)
Process Technology — OptiMOS 6 40V
Configuration — Half-Bridge (2 N-Channel MOSFETs)
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D, Tj) — 60 A
Power Dissipation (P_D, Tc=25C) — 75 W
R_DS(on) at VGS=10V — 3.1 mΩ
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS max rating]
工作温度范围 — -55 °C to +175 °C (Tj)
引脚数量 — 8
RoHS 状态 — Compliant

数据手册与资源

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