IPB020NE7N3GATMA1 vs BSC036NE7NS3GATMA1 对比
详细并排对比 IPB020NE7N3GATMA1 出自 Infineon 和 BSC036NE7NS3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSC036NE7NS3GATMA1 - 75V 100A N-Channel OptiMOS 3 MOSFET | Infineon
BSC036NE7NS3GATMA1 ✓ 量产中规格对比
| 参数 | IPB020NE7N3GATMA1 | BSC036NE7NS3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.31 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPB020NE7N3GATMA1 | — |
| Technology | OptiMOS 3 N-Channel Power MOSFET | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 75 V | 75 V |
| Continuous Drain Current (ID) at Tc | 120 A | — |
| Power Dissipation (PD) at Tc | 300 W | — |
| On-State Resistance RDS(on) | 2.0 mΩ typical (per part number code) | — |
| 封装 | PG-TO263-3 (D²PAK, TO-263AB) | PG-TDSON-8-7 (5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Configuration | Single | — |
| 工作温度范围 | -55C to +175C (junction) | -55C to +175C |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| RoHS 状态 | Compliant | ROHS3 Compliant |
| Lead-Free | Yes | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | 1 |
| Avalanche Rated | Yes (per OptiMOS 3 family datasheet) | — |
| Series | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| Pulsed Drain Current (IDM) | — | 400 A |
| On-Resistance (RDS(on) max @ VGS=10V) | — | 3.6 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | — | 2.6 V |
| Total Gate Charge (Qg typ @ VGS=10V) | — | 45 nC |
| Rise Time (tr typ) | — | 13 ns |
| Fall Time (tf typ) | — | 11 ns |
| Power Dissipation (PD max, Tc=25C) | — | 156 W |
| Power Dissipation (Ta=25C) | — | 2.5 W |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 0.8 C/W |