IPB021N10NM5LF2ATMA1 vs IPB020N08N5ATMA1 对比

详细并排对比 IPB021N10NM5LF2ATMA1 出自 Infineon 和 IPB020N08N5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPB021N10NM5LF2ATMA1 IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon

IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon

IPB021N10NM5LF2ATMA1 ✓ 量产中
Infineon
IPB020N08N5ATMA1 IPB020N08N5ATMA1 - 80V 2mOhm OptiMOS 5 N-FET | Infineon

IPB020N08N5ATMA1 - 80V 2mOhm OptiMOS 5 N-FET | Infineon

IPB020N08N5ATMA1 ✓ 量产中

规格对比

参数 IPB021N10NM5LF2ATMA1 IPB020N08N5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.75 $1.45
Manufacturer Infineon Technologies —
Part Family OptiMOS 5 Linear FET 2 —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (V_DS) 100 V —
Continuous Drain Current (I_D) at T_C=25°C 176 A —
Continuous Drain Current (I_D) at T_A=25°C 30 A —
R_DS(on) Maximum 2.1 mΩ —
Gate-Source Voltage (V_GS) Maximum ±20 V [DATA_NEEDED: absolute max rated V_GS] —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical/min] —
Power Dissipation (P_D) at T_C=25°C 375 W —
Power Dissipation (P_D) at T_A=25°C 3.8 W —
工作温度范围 -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range] —
封装 PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) PG-TO263-3 (D2PAK-2)
安装类型 Surface Mount Surface Mount
Drive Voltage (Max R_DS(on), Min R_DS(on)) 10 V, 15 V —
Technology OptiMOS 5 trench-gate MOSFET (Linear FET optimized) OptiMOS 5 (N-channel trench MOSFET)
RoHS 状态 Compliant Compliant
MSL 等级 [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] [DATA_NEEDED: MSL level]
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at Tc=25C — 120 A
Pulsed Drain Current (IDM) — 480 A
Maximum RDS(on) at VGS=10V — 2.0 mOhm
Gate-Source Voltage (VGS) max — +/- 20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Power Dissipation (PD) at Tc=25C — 300 W
工作结温 — -55C to +175C
Thermal Resistance Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC value, approx 0.5 C/W]
Avalanche Energy Rated (EAS) — [DATA_NEEDED: EAS value]
Configuration — Single N-channel, 3-pin (2+Tab)

数据手册与资源

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