IPB021N10NM5LF2ATMA1 vs IPB081N06L3GATMA1 对比

详细并排对比 IPB021N10NM5LF2ATMA1 出自 Infineon 和 IPB081N06L3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPB021N10NM5LF2ATMA1 IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon

IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon

IPB021N10NM5LF2ATMA1 ✓ 量产中

规格对比

参数 IPB021N10NM5LF2ATMA1 IPB081N06L3GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.75 $0.95
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 5 Linear FET 2 —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (V_DS) 100 V —
Continuous Drain Current (I_D) at T_C=25°C 176 A —
Continuous Drain Current (I_D) at T_A=25°C 30 A —
R_DS(on) Maximum 2.1 mΩ —
Gate-Source Voltage (V_GS) Maximum ±20 V [DATA_NEEDED: absolute max rated V_GS] —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical/min] —
Power Dissipation (P_D) at T_C=25°C 375 W —
Power Dissipation (P_D) at T_A=25°C 3.8 W —
工作温度范围 -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range] -55 C to +175 C (junction)
封装 PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) PG-TO263-3 (D2PAK)
安装类型 Surface Mount Surface Mount
Drive Voltage (Max R_DS(on), Min R_DS(on)) 10 V, 15 V —
Technology OptiMOS 5 trench-gate MOSFET (Linear FET optimized) OptiMOS 3 (low-voltage power MOSFET)
RoHS 状态 Compliant Compliant
MSL 等级 [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] 1 (unlimited)
Series — OptiMOS 3
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tc=25C — 50 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current rating]
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — 1.2 V min, 2.1 V typ, 2.6 V max
On-Resistance RDS(on) at VGS=10V — 8.1 mOhm typical
Maximum Power Dissipation (Pd) at Tc=25C — 79 W
引脚数 — 3
Pin Configuration — Gate / Drain / Source (D2PAK standard)

数据手册与资源

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