IPB027N10N3GATMA1 vs IPP147N12N3GXKSA1 对比

详细并排对比 IPB027N10N3GATMA1 出自 Infineon 和 IPP147N12N3GXKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPB027N10N3GATMA1 IPB027N10N3GATMA1 - 100V OptiMOS 3 N-FET, 2.7mΩ | Infineon

IPB027N10N3GATMA1 - 100V OptiMOS 3 N-FET, 2.7mΩ | Infineon

IPB027N10N3GATMA1 ✓ 量产中
Infineon
IPP147N12N3GXKSA1 IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon

IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon

IPP147N12N3GXKSA1 ✓ 量产中

规格对比

参数 IPB027N10N3GATMA1 IPP147N12N3GXKSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.62 $1.62
FET Type N-Channel —
Technology OptiMOS 3 (Trench MOSFET) OptiMOS 3 trench MOSFET
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25°C 120 A —
Power Dissipation (PD) at TC=25°C 300 W —
On-Resistance RDS(on) max at VGS=10V 3.4 mΩ —
On-Resistance RDS(on) typical at VGS=10V 2.7 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical and min/max VGS(th) values] —
工作温度范围 -55°C to +175°C (TJ) [DATA_NEEDED: Tj max and operating range]
封装 PG-TO263-3 (D2PAK) PG-TO220-3 (through-hole)
安装类型 Surface Mount Through Hole
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: exact °C/W value] —
Single Pulse Avalanche Energy (EAS) [DATA_NEEDED: datasheet EAS figure] —
RoHS 状态 Compliant Compliant (per distributor listing suffixes XKSA1)
MSL 等级 [DATA_NEEDED: moisture sensitivity level] —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg at VGS=10V] —
Manufacturer — Infineon Technologies
Series — OptiMOS
晶体管类型 — N-Channel MOSFET
Configuration — Single with built-in diode
Drain-to-Source Voltage (Vdss) — 120 V
Continuous Drain Current (Id) at Tc=25C — 56 A
Continuous Drain Current (Id) at Ta — 56 A (Ta, per DigiKey listing)
Power Dissipation (Pd) at Tc=25C — 107 W
引脚数 — 3 (3+Tab)
Gate Charge (Qg) — [DATA_NEEDED: typical Qg value]
Rds(on) max — [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V]
Vgs(th) (Gate Threshold) — [DATA_NEEDED: typical gate threshold voltage]
Input Capacitance (Ciss) — [DATA_NEEDED: typical Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: typical Coss]
Reverse Recovery (trr) — [DATA_NEEDED: body-diode reverse recovery time]
Avalanche Energy Rating — Single-pulse avalanche rated
Lead-Free — Yes
Qualification — Automotive grade (per datasheet.live listing 'Automotive')
Packing Method — Tube

数据手册与资源

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