IPB072N15N3GATMA1 vs BSC123N08NS3GATMA1 对比

详细并排对比 IPB072N15N3GATMA1 出自 Infineon 和 BSC123N08NS3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPB072N15N3GATMA1 IPB072N15N3GATMA1 - 150V 100A N-Ch OptiMOS 3 MOSFET | Infineon

IPB072N15N3GATMA1 - 150V 100A N-Ch OptiMOS 3 MOSFET | Infineon

IPB072N15N3GATMA1 ✓ 量产中
Infineon
BSC123N08NS3GATMA1 BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon

BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon

BSC123N08NS3GATMA1 ✓ 量产中

规格对比

参数 IPB072N15N3GATMA1 BSC123N08NS3GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.84 $0.71
FET Type N-Channel —
Technology OptiMOS 3 (trench MOSFET) —
Drain-Source Voltage (V_DS) 150 V —
Continuous Drain Current (I_D, Tc=25C) 100 A —
Continuous Drain Current (I_D, Tc=100C) [DATA_NEEDED: I_D at Tc=100C] —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed I_DM] —
Maximum Power Dissipation (P_D, Tc=25C) 300 W —
R_DS(on) typical at VGS=10V 7.2 mOhm —
R_DS(on) max at VGS=10V [DATA_NEEDED: max R_DS(on) at VGS=10V] —
Gate-Source Voltage (V_GS) max +/-20 V —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical] —
Total Gate Charge (Q_g) [DATA_NEEDED: Q_g typical at VGS=10V] —
工作温度范围 -55 C to +175 C —
封装 PG-TO263-3-2 (D2PAK-2, 3 pins + tab) PG-TDSON-8-1 (SuperSO8 5x6 mm)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant with exemption
Avalanche Energy Rated Yes (single-pulse E_AS) —
Intrinsic Body Diode Yes (low Q_rr, sync-rectifier capable) —
Manufacturer Ordering Code Suffix GATMA1 (tape and reel, 1000 pcs) —
Manufacturer — Infineon Technologies
Part Family — OptiMOS 3
Channel Type — N-Channel
Configuration — Single with built-in body diode
Maximum Drain-Source Voltage (VDS) — 80 V
Maximum Continuous Drain Current (ID, Tc) — 55 A
Maximum Continuous Drain Current (ID, Ta) — 11 A
Maximum Pulsed Drain Current — [DATA_NEEDED: pulsed drain current]
Maximum RDS(on) @ VGS=10 V — 12.3 mOhm
Maximum Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Power Dissipation (Tc) — 66 W
Power Dissipation (Ta) — 2.5 W
工作结温 — -55C to +150C
MSL 等级 — 1 (per JEDEC J-STD-020)
Automotive Qualified — Yes (AEC-Q101)

数据手册与资源

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