IPB100N04S4H2ATMA1 vs IPB100N12S305ATMA1 对比
详细并排对比 IPB100N04S4H2ATMA1 出自 Infineon 和 IPB100N12S305ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ 量产中
规格对比
| 参数 | IPB100N04S4H2ATMA1 | IPB100N12S305ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.42 | $1.25 |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-T2 (trench gate) | — |
| Drain-Source Voltage (VDS) | 40 V | 120 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| RDS(on) at VGS=10V | 2.4 mΩ typical | — |
| Maximum Power Dissition (PD) at TC=25C | 115 W | — |
| 工作结温 | -55C to +175C | — |
| Storage Temperature | [DATA_NEEDED: storage temp range] | — |
| 封装 | PG-TO263-3-2 (D2PAK-2) Surface Mount | — |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | MSL1 (up to 260C peak reflow) | — |
| Avalanche Energy (EAS) | 100% avalanche tested | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 Qualified |
| RoHS Compliance | Compliant (Green Product) | RoHS Compliant (Green Product) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS Power MOSFET |
| Channel Type | — | N-Channel Enhancement Mode |
| Continuous Drain Current (ID) | — | 100 A (Tc) |
| Power Dissipation (PD) | — | 300 W (Tc) |
| On-Resistance (RDS(on)) | — | 4.8 mOhm (typical) |
| Total Gate Charge (Qg) | — | 185 nC |
| 工作温度范围 | — | -55 C to +175 C (TJ) |
| 封装 / 外壳 | — | PG-TO263-3-1 (D2PAK, surface mount) |
| 引脚数 | — | 3 (Gate, Drain, Source) |
| 湿敏等级（MSL） | — | MSL1 (up to 260 C peak reflow) |
| Avalanche Tested | — | 100% Avalanche Tested |