IPC100N04S51R7ATMA1 vs IPD80R280P7ATMA1 对比
详细并排对比 IPC100N04S51R7ATMA1 出自 Infineon 和 IPD80R280P7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPC100N04S51R7ATMA1 | IPD80R280P7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.82 | $1.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-5 | — |
| 晶体管类型 | N-Channel MOSFET, Enhancement Mode | N-Channel MOSFET |
| Drain-Source Voltage VDS | 40 V | — |
| Continuous Drain Current ID | 100 A (at TC) | — |
| Pulsed Drain Current IDM | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage VGS | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) value] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation PD | 115 W (at TC) | — |
| Thermal Resistance RthJC | 1.3 K/W | — |
| 工作结温 | -55 °C to +175 °C | -55C to +150C |
| 封装 | PG-TDSON-8-34 (SS08 leadless) | PG-TO252-3 (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | MSL1 (260 °C peak reflow) | [DATA_NEEDED: MSL rating] |
| AEC-Q101 Qualified | Yes | — |
| Avalanche Tested | 100% tested | — |
| RoHS 状态 | Compliant (Green Product) | Compliant |
| Built-in Body Diode | Yes | — |
| Product Family | — | CoolMOS P7 |
| Technology | — | Superjunction (CoolMOS P7) |
| Drain-Source Voltage (V_DS) | — | 800 V |
| Continuous Drain Current (I_D, Tc) | — | 17 A |
| R_DS(on) max at V_GS=10V | — | 280 mOhm |
| Power Dissipation (P_D, Tc) | — | 101 W |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| ESD Protection | — | Integrated (per datasheet) |
| Lead-Free | — | Yes |