IPD30N06S215ATMA2 vs IRFR4105TRPBF 对比
详细并排对比 IPD30N06S215ATMA2 出自 Infineon 和 IRFR4105TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD30N06S215ATMA2 | IRFR4105TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.36 | $0.58 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS Power MOSFET | — |
| 晶体管类型 | N-Channel Enhancement Mode | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID, Tc) | 30 A | — |
| Power Dissipation (PD, Tc) | 136 W | — |
| 封装 / 外壳 | PG-TO252-3-11 (DPAK) - 3-Pin (2+Tab) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55 C to +175 C (junction) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| MSL 等级 | MSL1 (up to 260 C peak reflow) | [DATA_NEEDED: MSL rating] |
| Avalanche Tested | 100% avalanche tested | — |
| Lead-Free / RoHS | Green package (lead free), RoHS compliant | — |
| Gate Threshold Type | Logic-level compatible | — |
| Packing | Tape & Reel (T/R) | — |
| Technology | — | HEXFET (5th generation IR MOSFET) |
| Drain-Source Voltage (V_DS max) | — | 55 V |
| Continuous Drain Current (I_D at Tc) | — | 27 A |
| On-Resistance (R_DS(on) max at V_GS=10V) | — | 45 milliohm |
| Gate-Source Voltage (V_GS max) | — | 20 V |
| Total Gate Charge (Q_G) | — | 22.7 nC |
| Power Dissipation (P_D at Tc) | — | 68 W |
| 封装 | — | TO-252AA (DPAK) |
| 工作温度范围 | — | -55C to +175C |
| Gate Threshold Voltage (V_GS(th) typ) | — | [DATA_NEEDED: V_GS(th) typical value] |
| RoHS 状态 | — | Compliant (lead-free, PBF suffix) |
| Packaging Type | — | Tape and Reel (TRPBF) |
| Avalanche Energy (E_AS) | — | [DATA_NEEDED: E_AS rating] |