IPD50P04P413ATMA2 vs IPD90P04P4L04ATMA2 对比
详细并排对比 IPD50P04P413ATMA2 出自 Infineon 和 IPD90P04P4L04ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD50P04P413ATMA2 | IPD90P04P4L04ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.42 | $1.22 |
| Polarity / Device Type | P-Channel MOSFET | — |
| Technology | OptiMOS-P2 (Trench) | — |
| Drain-Source Voltage (VDS) | -40 V | — |
| Continuous Drain Current (TC=25°C, ID) | 50 A | — |
| Continuous Drain Current (TC=100°C, ID) | [DATA_NEEDED: ID @ 100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | — |
| Power Dissipation (TC=25°C, Ptot) | 58 W | — |
| On-State Resistance (RDS(on)) @ VGS=-10V | 9.2 mΩ (typ) / 12.6 mΩ (max) | — |
| On-State Resistance (RDS(on)) @ VGS=-4.5V | [DATA_NEEDED: RDS(on) @ VGS=-4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Maximum Junction Temperature (TJ,max) | 175 °C | — |
| 工作温度范围 | -55 °C to +175 °C | -55 C to +175 C |
| 封装 | PG-TO252-3-313 (DPAK) | PG-TO252-3-313 (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| Standard Pack Quantity (13" reel) | 2500 pcs | — |
| MSL 等级 | 1 | [DATA_NEEDED: MSL rating] |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS 状态 | Compliant | Compliant |
| Part Number | — | IPD90P04P4L04ATMA2 |
| Manufacturer | — | Infineon Technologies |
| Family | — | OptiMOS-P2 |
| Channel Type | — | P-Channel |
| Drain-Source Voltage (Vds) | — | -40 V |
| Continuous Drain Current (Id) at Tc=25C | — | -90 A |
| Power Dissipation (Pd) at Tc=25C | — | 125 W |
| On-State Resistance Rds(on) typ at Vgs=-10V | — | 4.3 mOhm |
| Gate Threshold Voltage Vgs(th) typ | — | [DATA_NEEDED: Vgs(th) typical value] |
| Maximum Junction Temperature | — | 175 C |
| 引脚数 | — | 3 (2 + Tab) |