IPD70N10S312ATMA1 vs IPD70N10S312ATMA2 对比
详细并排对比 IPD70N10S312ATMA1 出自 Infineon 和 IPD70N10S312ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD70N10S312ATMA1 | IPD70N10S312ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.92 | $0.69 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IPD70N10S312ATMA1 | IPD70N10S312ATMA2 |
| Product Family | OptiMOS-T Power-Transistor | — |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 70 A | 70 A |
| Pulsed Drain Current (IDM) | 180 A | — |
| Power Dissipation (PD, Tc) | 125 W | — |
| On-State Resistance (RDS(on)) | 11.1 mΩ @ 70 A, 10 V VGS | — |
| Gate-Source Voltage (VGS) | ±20 V | ±20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typical value] |
| Input Capacitance (Ciss) | 4355 pF @ 25 V | — |
| Total Gate Charge (Qg) | 65 nC @ 10 V | — |
| Operating Temperature (TJ) | -55 °C to +175 °C | — |
| 封装 | PG-TO252-3-11 (DPAK, 2 Leads + Tab) | PG-TO252-3-11 (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | MSL1 (up to 260 °C peak reflow) | 1 (unlimited floor life) |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Tested | 100 % (per datasheet) | — |
| RoHS Compliance | Green product, RoHS compliant | — |
| Technology | — | OptiMOS-T Power-MOSFET (N-Channel) |
| Power Dissipation (Ptot, Tc=25C) | — | 125 W |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: typical RDS(on) at VGS=10V] |
| 工作温度范围 | — | -55C to +175C |
| 引脚数量 | — | 3 (Gate, Drain, Source) |
| Channel Type | — | N-Channel Enhancement Mode |
| RoHS 状态 | — | Compliant |
| Avalanche Rated | — | Yes |