IPD80R600P7ATMA1 vs IPD60R600P6ATMA1 对比
详细并排对比 IPD80R600P7ATMA1 出自 Infineon 和 IPD60R600P6ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD80R600P7ATMA1 | IPD60R600P6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.92 | $0.72 |
| Drain-Source Voltage (VDS) | 800 V | — |
| Continuous Drain Current (ID, Tc) | 8 A | — |
| Pulsed Drain Current (IDM) | 22 A | — |
| On-Resistance (RDS(on), max) | 600 mΩ at VGS=10V | — |
| Maximum Power Dissipation (Ptot) | 60 W (Tc) | — |
| Gate Threshold Voltage (VGS(th)) | 3 V (typical) | — |
| Maximum Gate-Source Voltage (VGS) | ±30 V | — |
| Avalanche Energy, Single Pulse (EAS) | 20 mJ | — |
| Avalanche Energy, Repetitive (EAR) | 0.17 mJ | — |
| 工作温度范围 | -55 C to +150 C | — |
| 封装 | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) surface mount |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | CoolMOS P7 super-junction | CoolMOS P6 (superjunction N-channel MOSFET) |
| Polarity | N-Channel | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Drain-Source Voltage (Vds) | — | 600 V |
| Continuous Drain Current (Id, Tc) | — | 7.3 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: Idm pulse value] |
| On-State Resistance Rds(on) | — | 540 mOhm (typ, per Infineon product page) |
| Power Dissipation (Pd, Tc) | — | 63 W |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ] |
| Body Diode Reverse Recovery | — | Fast recovery (CoolMOS P6 family characteristic) |
| 工作结温 | — | -40C to +150C |
| RoHS 状态 | — | Compliant (per Infineon product page) |
| Application Family | — | PFC stages, hard/soft switching PWM, resonant converters, PC Silverbox, adapter, LCD/PDP TV, lighting, server, telecom, UPS |
| Series | — | CoolMOS P6 industrial grade |