IPD90N06S407ATMA2 vs IPD380P06NMATMA1 对比

详细并排对比 IPD90N06S407ATMA2 出自 Infineon 和 IPD380P06NMATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPD90N06S407ATMA2 IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon

IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon

IPD90N06S407ATMA2 ✓ 量产中
Infineon
IPD380P06NMATMA1 IPD380P06NMATMA1 - 60V P-Ch MOSFET 35A OptiMOS | Infineon

IPD380P06NMATMA1 - 60V P-Ch MOSFET 35A OptiMOS | Infineon

IPD380P06NMATMA1 ✓ 量产中

规格对比

参数 IPD90N06S407ATMA2 IPD380P06NMATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.84 $0.49
FET Type N-Channel Enhancement Mode —
Drain-to-Source Voltage (V_DS) 60 V —
Continuous Drain Current (I_D at T_C) 90 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
R_DS(on) Max at V_GS=10 V, I_D=90 A 6.9 mOhm —
Gate Threshold Voltage (V_GS(th)) 4 V at 40 uA —
Total Gate Charge (Q_G) at V_GS=10 V 56 nC —
Maximum Power Dissipation (P_D at T_C) 79 W —
工作结温 -55 C to +175 C —
Storage Temperature [DATA_NEEDED: storage temperature range] —
封装 PG-TO252-3-11 (DPAK) PG-TO252-3 (DPAK), surface mount
安装类型 Surface Mount Surface Mount
Lead-Free / RoHS Yes (Green Product) —
MSL (Moisture Sensitivity Level) MSL1 (up to 260 C peak reflow) —
Automotive Qualification AEC-Q101 Qualified —
Avalanche Rating 100% Avalanche Tested —
Polarity / Channel Type — P-Channel
Drain-Source Voltage V(BR)DSS — 60 V
连续漏极电流(TC=25°C) — 35 A
Power Dissipation (Tc) — 125 W
Technology — OptiMOS P-channel trench
工作温度范围 — -55 C to +150 C (junction)
Gate Drive — Logic-level compatible
Avalanche Rated — Yes (per manufacturer datasheet)
RoHS 状态 — Compliant
MSL 等级 — 1
Target Applications — Reverse-polarity protection, load switch, BMS, high-side switch
Lead-Free — Yes
Automotive Qualified — Not specified in provided data [DATA_NEEDED: AEC-Q100 grade]

数据手册与资源

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