IPT022N10NF2SATMA1 vs IGLR70R270D2SXUMA1 对比
详细并排对比 IPT022N10NF2SATMA1 出自 Infineon 和 IGLR70R270D2SXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IGLR70R270D2SXUMA1 - 700V GaN Transistor, 270mΩ CoolGaN G5 | Infineon
IGLR70R270D2SXUMA1 ✓ 量产中规格对比
| 参数 | IPT022N10NF2SATMA1 | IGLR70R270D2SXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.99 | $2.13 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | StrongIRFET 2 | CoolGaN™ G5 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V(BR)DSS) | 100 V | — |
| Continuous Drain Current (Id) at Ta | 29 A | — |
| Continuous Drain Current (Id) at Tc | 236 A | — |
| Typical RDS(on) at VGS=10V | 2.2 mΩ | — |
| Power Dissipation at Ta | 3.8 W | — |
| Power Dissipation at Tc | 250 W | — |
| 封装 | PG-HSOF-8-10 (8 leads + tab) | PG-TSON-8-8 (ThinPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | Trench MOSFET | Gallium Nitride (GaN) HEMT, enhancement-mode |
| 工作温度范围 | -55C to +175C | -40C to +150C (junction) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| RoHS 状态 | Compliant | Compliant |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 700 V |
| Continuous Drain Current (ID, Tc) | — | 7.3 A |
| Power Dissipation (PD, Tc) | — | 28 W |
| On-State Resistance (RDS(on), typ.) | — | 270 mΩ |
| Gate Drive | — | 0 to 12 V (enhancement-mode, internal gate diode) |
| Wafer Process | — | 200 mm (8-inch) GaN-on-Si |
| Reverse Recovery Charge (Qrr) | — | 0 nC (no body diode) |