IPZ40N04S53R1ATMA1 vs BSC0902NSATMA1 对比
详细并排对比 IPZ40N04S53R1ATMA1 出自 Infineon 和 BSC0902NSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPZ40N04S53R1ATMA1 | BSC0902NSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.55 | $0.78 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-to-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D) at Tc=25 C | 40 A | — |
| Power Dissipation (P_D) at Tc=25 C | 71 W | — |
| R_DS(on) max at V_GS=10 V, I_D=20 A | 3.1 mOhm | — |
| Drive Voltage (Max R_DS on, Min R_DS on) | 7 V, 10 V | — |
| Maximum V_GS | +/-20 V | — |
| 工作温度范围 | -55 C to +175 C | -55C to +150C (Tj) |
| 封装 | PG-TSDSON-8 (5x6 mm) with exposed pad | PG-TDSON-8-6 (SuperSO8) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | MSL1 (260 C peak reflow) | — |
| Qualification | AEC-Q101 automotive | JEDEC qualified for target applications |
| Avalanche Tested | 100 % | — |
| RoHS Compliance | Compliant (Green Product) | Compliant (Pb-free lead plating) |
| Series | OptiMOS 5 (IPZ family) | — |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID, Ta) | — | 24 A |
| Pulsed Drain Current (IDM, Tc) | — | 100 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 48 W |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical value] |
| RDS(on) @ VGS=10V max | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| RDS(on) @ VGS=4.5V max | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Total Gate Charge (Qg typ) | — | [DATA_NEEDED: Qg typical] |
| 无卤 | — | Yes, per IEC 61249-2-21 |
| Avalanche Rated | — | Yes (100% avalanche tested) |