IQD009N06NM5SCATMA1 vs IPC50N04S5L5R5ATMA1 对比

详细并排对比 IQD009N06NM5SCATMA1 出自 Infineon 和 IPC50N04S5L5R5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IQD009N06NM5SCATMA1 IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon

IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon

IQD009N06NM5SCATMA1 ✓ 量产中
Infineon
IPC50N04S5L5R5ATMA1 IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon

IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon

IPC50N04S5L5R5ATMA1 ✓ 量产中

规格对比

参数 IQD009N06NM5SCATMA1 IPC50N04S5L5R5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.42 $0.36
Manufacturer Infineon Technologies —
Part Series OptiMOS 5 60V (IQD009N06NM5) —
Polarity / Channel Type N-Channel Enhancement Mode —
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID, Ta=25C) 42 A —
Pulsed Drain Current (IDM, Tc) 445 A —
On-Resistance RDS(on) max @ VGS=10V 0.9 mOhm —
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 333 W 42 W
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS abs max, typical +/-20V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
封装 PG-WHSON-8-U02 (PQFN 5x6 mm) PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad)
安装类型 Surface Mount Surface Mount
工作温度范围 [DATA_NEEDED: Tj min/max] -55 °C to +175 °C
RoHS 状态 Compliant —
MSL 等级 [DATA_NEEDED: MSL classification] —
Tape and Reel Packaging Yes (suffix SCATMA1) —
晶体管类型 — N-Channel MOSFET
Mode — Enhancement Mode
Continuous Drain Current (ID, Tc) — 50 A
Maximum Drain Current (silicon-limited, 25 °C) — 60 A
On-Resistance RDS(on) max @ VGS=10 V — 5.5 mΩ
Gate Threshold VGS(th) — Logic Level (enhancement at ≤ 4.5 V VGS)
Thermal Resistance Junction-to-Case RthJC — 3.6 K/W
AEC-Q101 Qualification — Qualified (automotive grade)
MSL (Moisture Sensitivity Level) — MSL1
Peak Reflow Temperature — 260 °C
Avalanche Rating — 100 % Avalanche Tested
RoHS / REACH — RoHS Compliant (Green Product)

数据手册与资源

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