IQDH29NE2LM5CGSCATMA1 vs IQD020N10NM5CGSCATMA1 对比
详细并排对比 IQDH29NE2LM5CGSCATMA1 出自 Infineon 和 IQD020N10NM5CGSCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQDH29NE2LM5CGSCATMA1 | IQD020N10NM5CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.84 | $3.20 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 Power-Transistor | — |
| Drain-Source Voltage (VDS) | 25 V | 100 V |
| Continuous Drain Current (Ta) | 75 A | — |
| Continuous Drain Current (Tc) | 789 A | — |
| Power Dissipation (Ta) | 2.5 W | 3 W |
| Power Dissipation (Tc) | 278 W | 333 W |
| Maximum On-Resistance RDS(on) | 0.29 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2 V (typ) | — |
| 封装 | PG-WHTFN-9-U02 (WHTFN EP) | PG-WHTFN-9-U02 (PQFN 5x6 mm) with exposed thermal pad |
| 引脚数量 | 9 | — |
| 安装类型 | Surface Mount | Surface Mount |
| Cooling | Dual-side exposed pad (top + bottom) | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| RoHS 状态 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 100V (IQD series) |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | — | 276 A |
| Continuous Drain Current (ID, Ta) | — | 26 A |
| On-Resistance (RDS(on), max) | — | 2.0 mOhm at VGS = 10 V |
| On-Resistance (RDS(on)) - JLCPCB listing | — | 1.8 mOhm at VGS = 10 V |
| Gate Threshold Voltage (VGS(th), typ) | — | 3.8 V |
| Gate Charge (Qg, total) | — | 107 nC at VGS = 10 V |
| Input Capacitance (Ciss) | — | 7.3 nF |
| Output Capacitance (Coss) | — | 1 nF |
| Reverse Transfer Capacitance (Crss) | — | 42 pF |
| 工作结温 | — | -55C to +175C |
| Gate Drive Level | — | Logic-level (10 V VGS rated) |