IQE004NE1LM7CGATMA1 vs IQE036N08NM6CGSCATMA1 对比
详细并排对比 IQE004NE1LM7CGATMA1 出自 Infineon 和 IQE036N08NM6CGSCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQE004NE1LM7CGATMA1 | IQE036N08NM6CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.06 | $0.88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | OptiMOS 6 |
| Technology | N-Channel Trench Power MOSFET | Trench MOSFET (OptiMOS 6) |
| Drain-Source Voltage (VDS) | 15 V | 80 V |
| Continuous Drain Current (ID, TA=25C) | 58 A | — |
| Continuous Drain Current (ID, TC=25C) | 379 A | — |
| Power Dissipation (TA=25C) | 2.1 W | — |
| Power Dissipation (TC=25C) | 89 W | — |
| On-Resistance RDS(on) max | 0.45 mOhm at VGS=10 V | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| 封装 | PG-TTFN-9-3 (surface mount) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55C to +150C (junction) | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| Packaging | Tape & Reel (CGATMA1 suffix) | — |
| Polarization | N-Channel | — |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA | — | 16.7 A |
| Continuous Drain Current (ID) at TC | — | 118 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 125 W |
| 封装 / 外壳 | — | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) |
| Configuration | — | Source Down, Center Gate, Dual-Side Cooling |
| 工作温度范围 | — | -55 C to +150 C (junction, per datasheet derating curves) |
| Packing | — | Tape and Reel (suffix ATMA1) |
| Voltage Rating | — | 60 V to 100 V category (80 V nominal) |