IQE004NE1LM7CGATMA1 vs ISC058N04NM5ATMA1 对比

详细并排对比 IQE004NE1LM7CGATMA1 出自 Infineon 和 ISC058N04NM5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IQE004NE1LM7CGATMA1 IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon

IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon

IQE004NE1LM7CGATMA1 ✓ 量产中

规格对比

参数 IQE004NE1LM7CGATMA1 ISC058N04NM5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.06 $0.60
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 —
Technology N-Channel Trench Power MOSFET OptiMOS 5 trench MOSFET
Drain-Source Voltage (VDS) 15 V 40 V
Continuous Drain Current (ID, TA=25C) 58 A —
Continuous Drain Current (ID, TC=25C) 379 A —
Power Dissipation (TA=25C) 2.1 W 3 W
Power Dissipation (TC=25C) 89 W 42 W
On-Resistance RDS(on) max 0.45 mOhm at VGS=10 V —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
封装 PG-TTFN-9-3 (surface mount) PG-TDSON-8 FL (SuperSO8 5x6 mm)
安装类型 Surface Mount Surface Mount
工作温度 -55C to +150C (junction) —
RoHS 状态 Compliant —
MSL 等级 [DATA_NEEDED: MSL rating] —
Packaging Tape & Reel (CGATMA1 suffix) —
Polarization N-Channel —
Product Family — OptiMOS 5 40V Normal Level
晶体管类型 — N-Channel MOSFET
Continuous Drain Current (ID, Tc=25C) — 63 A
Continuous Drain Current (ID, Ta=25C) — 17 A
On-Resistance Rds(on) max @ VGS=10V, ID=31A — 5.8 mOhm
Gate Threshold Voltage VGS(th) typ — 3.4 V
工作温度范围 — -55C to +175C
RoHS Compliance — RoHS Compliant
MSL (Moisture Sensitivity Level) — MSL per JEDEC J-STD-020
Gate Drive Level — Normal Level (10V VGS recommended)

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