IQE012N03LM5CGATMA1 vs IQE036N08NM6CGSCATMA1 对比
详细并排对比 IQE012N03LM5CGATMA1 出自 Infineon 和 IQE036N08NM6CGSCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQE012N03LM5CGATMA1 | IQE036N08NM6CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.38 | $0.88 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | 80 V |
| Continuous Drain Current (ID, Ta) | 34 A | — |
| Pulsed Drain Current (IDM, Tc) | 224 A | — |
| On-Resistance RDS(on), typ | 1.20 mOhm | — |
| Gate-Source Threshold VGS(th) | 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level) | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 107 W | — |
| Technology / Process | OptiMOS 5 trench | — |
| 封装 | PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55 C to +150 C (TJ) | — |
| Gate Drive (recommended) | 10 V (logic-level compatible) | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 6 |
| Part Status | — | Active |
| Continuous Drain Current (ID) at TA | — | 16.7 A |
| Continuous Drain Current (ID) at TC | — | 118 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 125 W |
| 封装 / 外壳 | — | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) |
| Technology | — | Trench MOSFET (OptiMOS 6) |
| Configuration | — | Source Down, Center Gate, Dual-Side Cooling |
| 工作温度范围 | — | -55 C to +150 C (junction, per datasheet derating curves) |
| Packing | — | Tape and Reel (suffix ATMA1) |
| Voltage Rating | — | 60 V to 100 V category (80 V nominal) |