IQEH68NE2LM7UCGATMA1 vs IQEH54NE2LM7UCGATMA1 对比

详细并排对比 IQEH68NE2LM7UCGATMA1 出自 Infineon 和 IQEH54NE2LM7UCGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IQEH68NE2LM7UCGATMA1 IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon

IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon

IQEH68NE2LM7UCGATMA1 ✓ 量产中
Infineon
IQEH54NE2LM7UCGATMA1 IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon

IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon

IQEH54NE2LM7UCGATMA1 ✓ 量产中

规格对比

参数 IQEH68NE2LM7UCGATMA1 IQEH54NE2LM7UCGATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.35 $1.95
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 —
晶体管类型 N-Channel MOSFET —
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) @ Ta 47 A —
Pulsed Drain Current (IDM) @ Tc 338 A —
Power Dissipation (PD) @ Ta 2.5 W —
Power Dissipation (PD) @ Tc 130 W —
Gate Threshold Voltage Type Logic-level (per OptiMOS 7 family) —
On-Resistance Family RDS(on)10 / RDS(on)45 (10V and 4.5V rated) —
Maximum Junction Temperature 175 °C —
工作温度范围 -55 °C to +175 °C (typical for OptiMOS 7) -55C to +150C (typical MOSFET range)
封装 PG-TTFN-9-3 (surface mount) PG-TTFN-9-3
安装类型 Surface Mount Surface Mount
MSL 等级 [DATA_NEEDED: MSL Level] [DATA_NEEDED: MSL rating]
RoHS 状态 Compliant (per distributor listing) Compliant
Technology OptiMOS 7 trench MOSFET —
Packaging Tape & Reel (per ATMA1 suffix) —
Product Family — OptiMOS 7 Power-Transistor
Channel Type — N-Channel
Continuous Drain Current (ID) at Ta — 52 A
Continuous Drain Current (ID) at Tc — 406 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 150 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance (RDS(on)) at 10V VGS — [DATA_NEEDED: RDS(on) max in mohm at VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical in nC]

数据手册与资源

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