IR2110SPBF vs 2ED2738S01GXTMA1 对比

详细并排对比 IR2110SPBF 出自 Infineon 和 2ED2738S01GXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2ED2738S01GXTMA1 2ED2738S01GXTMA1 - 8A SOI Half-Bridge Gate Driver | Infineon

2ED2738S01GXTMA1 - 8A SOI Half-Bridge Gate Driver | Infineon

2ED2738S01GXTMA1 ✓ 量产中

规格对比

参数 IR2110SPBF 2ED2738S01GXTMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.98 $0.95
功能 Half-bridge gate driver —
拓扑 High-side and low-side referenced output channels —
Number of Channels 2 (1 high-side, 1 low-side) —
Logic Type Non-inverting —
Maximum Offset Voltage (Voffset) 500 V —
Gate Drive Supply Voltage (Vcc/VCC) 10 V to 20 V —
Peak Output Current (source/sink) 2.0 A / 2.0 A —
Typical Propagation Delay (ton/toff) 94 ns / 94 ns —
Rise/Fall Time (typical) 25 ns / 17 ns —
Logic Input Compatibility 3.3 V CMOS / LSTTL —
Bootstrap Diode Integrated Integrated
Undervoltage Lockout (UVLO) Yes, both Vcc and VCC —
工作温度范围 -40 C to +125 C —
封装 16-pin SOIC (SO-16, DW suffix) PG-VSON-10-5 (3x3 mm) with EP
安装类型 Surface Mount Surface Mount
Technology HVIC + latch-immune CMOS —
Lead-Free / RoHS Yes / Compliant (Pb-free PBF suffix) —
Driver Configuration — Half-Bridge (High-Side + Low-Side)
Output Current (Source, peak) — 4.0 A
Output Current (Sink, peak) — 8.0 A
Output Current (Source, typ) — 1.0 A
Output Current (Sink, typ) — 2.0 A
输出数量 — 1
Input Type — Non-Inverting
Input Logic Compatibility — TTL
Supply Voltage (VDD/VCC) — 6 V to 20 V
Bootstrap Supply Voltage — Up to 600 V (HS pin rating)
Propagation Delay (typ) — 120 ns
Channel-to-Channel Match — 40 ns
Rise/Fall Time (1 nF load) — 1.5 ns / 1.5 ns
Negative Transient Immunity (HS) — -10 V to +20 V transient
Under-Voltage Lockout — VCC and Bootstrap
工作温度 — -40C to +125C
MSL 等级 — 2 (1 year)
RoHS 状态 — Compliant

数据手册与资源

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