IR2127SPBF vs IR2127STRPBF 对比

详细并排对比 IR2127SPBF 出自 Infineon 和 IR2127STRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IR2127STRPBF IR2127STRPBF - 600V High-Side Gate Driver IC | Infineon

IR2127STRPBF - 600V High-Side Gate Driver IC | Infineon

IR2127STRPBF ✓ 量产中

规格对比

参数 IR2127SPBF IR2127STRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.74 $0.71
Channel Type Single-channel, High-Side —
Gate Driver Configuration Non-Inverting Input —
输出数量 1 1
Peak Source Current (typ) 0.25 A —
Peak Sink Current (typ) 0.5 A —
Maximum Offset Voltage (High-Side) +600 V —
Negative Transient Tolerance dV/dt immune, negative transient tolerant —
Supply Voltage (VCC) 10 V to 20 V —
Logic Input Compatibility CMOS / LSTTL, 3.3 V to VCC —
Propagation Delay (typ) 150 ns —
Rise Time (typ, 1 nF load) 80 ns —
Fall Time (typ, 1 nF load) 40 ns —
Protection Features Overcurrent detection with DESAT-style comparator, fault output —
工作温度 -40 °C to +125 °C —
封装 8-SOIC (SOIC-8) 8-SOIC (3.90 mm body)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant (Pb-free suffix PBF) —
Configuration — High-Side
Supply Voltage Range — 12 V to 20 V
Output Voltage (Offset) — up to 600 V
Peak Source Current — 250 mA
Peak Sink Current — 500 mA
Propagation Delay — 200 ns (typical)
Input Logic — Non-Inverting
上升时间 — 80 ns (typical)
下降时间 — 60 ns (typical)
工作温度范围 — -40C to +125C
MSL 等级 — MSL3 (per JEDEC J-STD-020)
Lead-Free / RoHS — Pb-free (PBF), RoHS compliant
dV/dt Immunity — Yes (high-side floating channel)
Integrated Current Sense — Yes (cycle-by-cycle comparator)

数据手册与资源

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