IR2127STRPBF vs IR2127SPBF 对比

详细并排对比 IR2127STRPBF 出自 Infineon 和 IR2127SPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IR2127STRPBF IR2127STRPBF - 600V High-Side Gate Driver IC | Infineon

IR2127STRPBF - 600V High-Side Gate Driver IC | Infineon

IR2127STRPBF ✓ 量产中

规格对比

参数 IR2127STRPBF IR2127SPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.71 $0.74
Configuration High-Side —
Supply Voltage Range 12 V to 20 V —
Output Voltage (Offset) up to 600 V —
Peak Source Current 250 mA —
Peak Sink Current 500 mA —
Propagation Delay 200 ns (typical) —
Input Logic Non-Inverting —
输出数量 1 1
上升时间 80 ns (typical) —
下降时间 60 ns (typical) —
工作温度范围 -40C to +125C —
封装 8-SOIC (3.90 mm body) 8-SOIC (SOIC-8)
安装类型 Surface Mount Surface Mount
MSL 等级 MSL3 (per JEDEC J-STD-020) —
Lead-Free / RoHS Pb-free (PBF), RoHS compliant —
dV/dt Immunity Yes (high-side floating channel) —
Integrated Current Sense Yes (cycle-by-cycle comparator) —
Channel Type — Single-channel, High-Side
Gate Driver Configuration — Non-Inverting Input
Peak Source Current (typ) — 0.25 A
Peak Sink Current (typ) — 0.5 A
Maximum Offset Voltage (High-Side) — +600 V
Negative Transient Tolerance — dV/dt immune, negative transient tolerant
Supply Voltage (VCC) — 10 V to 20 V
Logic Input Compatibility — CMOS / LSTTL, 3.3 V to VCC
Propagation Delay (typ) — 150 ns
Rise Time (typ, 1 nF load) — 80 ns
Fall Time (typ, 1 nF load) — 40 ns
Protection Features — Overcurrent detection with DESAT-style comparator, fault output
工作温度 — -40 °C to +125 °C
RoHS 状态 — Compliant (Pb-free suffix PBF)

数据手册与资源

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