IRF4905SPBF vs IRF9530NPBF 对比

详细并排对比 IRF4905SPBF 出自 Infineon 和 IRF9530NPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRF4905SPBF IRF9530NPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.18 $0.65
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -55 V -100 V
Continuous Drain Current (ID, Tc=25C) -42 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on) max) 20 mOhm @ VGS = -10V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max, typical +/-20V] —
Gate Threshold Voltage (VGS(th)) -2.0 V to -4.0 V —
Power Dissipation (PD, Tc=25C) 170 W —
工作结温 -55 C to +150 C -55°C to +175°C
Thermal Resistance, Junction-to-Case (RthJC) [DATA_NEEDED: RthJC, typical 0.6 C/W] —
封装 D2PAK (TO-263) surface mount TO-220AB (through-hole)
安装类型 Surface Mount Through Hole
Technology HEXFET, planar cell —
Total Gate Charge (Qg) 120 nC (typical per Mouser listing) —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
RoHS 状态 Compliant (PBF suffix indicates Pb-free) —
Qualification JEDEC standard —
Continuous Drain Current (ID) at TC=25°C — -14 A
On-Resistance RDS(on) max @ VGS=-10V — 200 mΩ
Gate-Source Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) typ — 38.7 nC
Maximum Power Dissition at TC=25°C — 79 W
Mounting Screw Torque (max) — [DATA_NEEDED: maximum torque]
Avalanche Rating — Repetitive avalanche rated
dv/dt Rating — Dynamic dV/dt rated
Lead-Free / RoHS Status — Lead-Free (PBF suffix), RoHS compliant

数据手册与资源

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