IRF7105TRPBF vs IRF7306TRPBF 对比
详细并排对比 IRF7105TRPBF 出自 Infineon 和 IRF7306TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF7105TRPBF | IRF7306TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.30 | $0.55 |
| Manufacturer | Infineon Technologies | — |
| Part Series | IRF7105 (HEXFET Fifth Generation) | — |
| Polarity / Configuration | N-Channel + P-Channel, dual MOSFET in one package | — |
| Drain-to-Source Voltage (Vds) | 25 V | — |
| Continuous Drain Current - N-channel (Id, N-ch) | 3.5 A | — |
| Continuous Drain Current - P-channel (Id, P-ch) | 2.3 A | — |
| Rds(on) Maximum | 100 mOhm | — |
| Technology | HEXFET (IR MOSFET, fifth generation) | HEXFET Power MOSFET (Generation V) |
| 封装 | 8-SO (SOIC-8) | 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) |
| Total Package Power Dissipation (Pd) | 2 W | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | [DATA_NEEDED: junction temperature range] | -55°C to +150°C (junction) |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: typical Vgs(th)] | — |
| Packaging Form | Tape & Reel (TR) | — |
| Lead-Free / RoHS Status | Pb-free (PBF suffix), RoHS compliant | — |
| 引脚数量 | 8 | — |
| Polarity | — | P-Channel (dual) |
| Number of Channels | — | 2 (independent, in single package) |
| Drain-to-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) | — | -3.6 A at 25°C |
| On-Resistance RDS(on) max | — | 100 mOhm at VGS = -10 V |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg total] |
| Maximum Power Dissipation | — | 2 W at TA = 25°C |
| Packaging | — | Tape & Reel (TR) |
| MSL 等级 | — | 1 (per JEDEC J-STD-020) |
| RoHS Compliance | — | Yes (PBF suffix indicates Pb-free) |
| Qualification | — | Consumer market qualification standards (per IR/Infineon datasheet) |
| Avalanche Rated | — | Yes (ruggedized device per datasheet) |