IRF7105TRPBF vs IRF7380TRPBF 对比
详细并排对比 IRF7105TRPBF 出自 Infineon 和 IRF7380TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF7105TRPBF | IRF7380TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.30 | $0.32 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Series | IRF7105 (HEXFET Fifth Generation) | — |
| Polarity / Configuration | N-Channel + P-Channel, dual MOSFET in one package | — |
| Drain-to-Source Voltage (Vds) | 25 V | — |
| Continuous Drain Current - N-channel (Id, N-ch) | 3.5 A | — |
| Continuous Drain Current - P-channel (Id, P-ch) | 2.3 A | — |
| Rds(on) Maximum | 100 mOhm | — |
| Technology | HEXFET (IR MOSFET, fifth generation) | IR MOSFET™ (Infineon HEXFET-style planar N-ch) |
| 封装 | 8-SO (SOIC-8) | SO-8 (8-SO, SOIC-8) |
| Total Package Power Dissipation (Pd) | 2 W | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | [DATA_NEEDED: junction temperature range] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: typical Vgs(th)] | — |
| Packaging Form | Tape & Reel (TR) | — |
| Lead-Free / RoHS Status | Pb-free (PBF suffix), RoHS compliant | — |
| 引脚数量 | 8 | — |
| Part Number | — | IRF7380TRPBF |
| Configuration | — | Dual N-Channel MOSFET Array (2 independent FETs in one package) |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) | — | 3.6 A |
| On-Resistance RDS(on) max | — | 73 mOhm at VGS = 10 V |
| Total Power Dissipation (PD) | — | 2 W |
| 工作结温 | — | -55 C to +150 C |
| Gate Drive Voltage (typical) | — | 10 V (full RDS(on)); logic-level not guaranteed |
| Lead-Free / RoHS | — | Yes (Pb-free plating, suffix PBF) |
| Packaging | — | Tape & Reel (suffix TR) |
| Primary Application | — | High-frequency DC-DC converters |