IRF7313TRPBF vs IRF9952TRPBF 对比

详细并排对比 IRF7313TRPBF 出自 Infineon 和 IRF9952TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRF9952TRPBF IRF9952TRPBF - Dual N+P 30V MOSFET Array, SO-8 | Infineon

IRF9952TRPBF - Dual N+P 30V MOSFET Array, SO-8 | Infineon

IRF9952TRPBF ✓ 量产中

规格对比

参数 IRF7313TRPBF IRF9952TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.27 $0.32
Manufacturer Infineon (formerly International Rectifier) —
Part Number IRF7313TRPBF —
Technology IR MOSFET Generation V (HEXFET Fifth Generation) IR MOSFET / Fifth Generation HEXFET
Transistor Configuration Dual N-Channel (Independent) —
Drain-Source Voltage (VDS) max 30 V —
Continuous Drain Current (ID) max 6.5 A per channel —
On-Resistance (RDS(on)) max 29 mOhm at VGS=10V —
Power Dissipation (PD) max 2 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: ±V rating] —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (typical range) —
工作温度范围 -55C to +150C (junction) -55C to +150C (junction)
封装 8-pin SOIC (SO-8) surface mount 8-pin SOIC (SO-8), surface mount
安装类型 Surface Mount Surface Mount
Lead-Free / Pbf Yes (lead-free plating) —
Avalanche Rated Yes —
MSL 等级 1 —
Qualification Standard Consumer market (per IR datasheet) —
Shipping Media Tape & Reel (TRPBF suffix) —
Polarity / Configuration — Complementary N-Channel + P-Channel, dual MOSFET array
N-Channel VDS (Drain-Source Voltage) — 30 V
P-Channel VDS (Drain-Source Voltage) — -30 V
N-Channel Continuous Drain Current (ID) — 3.5 A
P-Channel Continuous Drain Current (ID) — 2.3 A
N-Channel R_DS(on) max — 0.10 ohm (at VGS = 10 V)
P-Channel R_DS(on) max — 0.25 ohm (at VGS = -10 V)
Total Package Power Dissipation (PD) — 2 W
RoHS 状态 — Compliant (Pb-free, indicated by PBF suffix)
Tape and Reel Packaging — Yes (TRPBF suffix)
Qualification — Consumer market

数据手册与资源

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