IRF7342TRPBF vs IRF9952TRPBF 对比

详细并排对比 IRF7342TRPBF 出自 Infineon 和 IRF9952TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRF9952TRPBF IRF9952TRPBF - Dual N+P 30V MOSFET Array, SO-8 | Infineon

IRF9952TRPBF - Dual N+P 30V MOSFET Array, SO-8 | Infineon

IRF9952TRPBF ✓ 量产中

规格对比

参数 IRF7342TRPBF IRF9952TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.48 $0.32
Part Number IRF7342TRPBF —
Manufacturer Infineon Technologies (formerly International Rectifier) —
Technology HEXFET Power MOSFET (Fifth Generation), P-Channel IR MOSFET / Fifth Generation HEXFET
Configuration Dual P-Channel MOSFET Array (two independent P-FETs in one package) —
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) -3.4 A at 25 C —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Gate Threshold Voltage (Vgs(th)) -1.0 V to -3.0 V (typ -1.7 V) —
Drain-Source On-Resistance (RDS(on)) 0.105 ohm max at VGS = -10 V —
Maximum Power Dissumption (Pd) 2 W —
工作温度范围 -55 C to +150 C (Tj) -55C to +150C (junction)
封装 8-SOIC (SO-8), surface mount 8-pin SOIC (SO-8), surface mount
安装类型 Surface Mount Surface Mount
Packaging Tape and Reel (TR) —
Lead-Free / RoHS Yes (PBF suffix indicates lead-free, RoHS compliant) —
Channel Type P-Channel (enhancement mode) —
Number of Channels 2 (dual array) —
Polarity / Configuration — Complementary N-Channel + P-Channel, dual MOSFET array
N-Channel VDS (Drain-Source Voltage) — 30 V
P-Channel VDS (Drain-Source Voltage) — -30 V
N-Channel Continuous Drain Current (ID) — 3.5 A
P-Channel Continuous Drain Current (ID) — 2.3 A
N-Channel R_DS(on) max — 0.10 ohm (at VGS = 10 V)
P-Channel R_DS(on) max — 0.25 ohm (at VGS = -10 V)
Total Package Power Dissipation (PD) — 2 W
RoHS 状态 — Compliant (Pb-free, indicated by PBF suffix)
Tape and Reel Packaging — Yes (TRPBF suffix)
Qualification — Consumer market

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