IRF7854TRPBF vs IRF7495TRPBF 对比
详细并排对比 IRF7854TRPBF 出自 Infineon 和 IRF7495TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF7854TRPBF | IRF7495TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.48 | $0.65 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 10 A | — |
| Power Dissipation (PD) at Ta=25°C | 2.5 W | — |
| On-Resistance RDS(on) max at VGS=10V | 13.4 mΩ | — |
| Gate-Source Threshold Voltage VGS(th) max | 4.9 V | — |
| Total Gate Charge Qg | 27 nC | — |
| 封装 | SO-8 | 8-SOIC (SO-8) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | HEXFET (planar N-channel) | IR MOSFET (HEXFET) |
| 工作温度范围 | -55°C to +150°C (TJ) | -55 C to +150 C (TJ) |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | — |
| Qualification | JEDEC industrial, Normal level | — |
| Solder Process | Reflow and wave-solderable | — |
| Gate Drive Voltage (recommended) | 10 V | — |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| Continuous Drain Current (ID) at TA=25 C | — | 7.3 A |
| On-Resistance RDS(on) Max at VGS=10V | — | 22 mOhm |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Total Gate Charge (Qg) Typ | — | 34 nC at 10 V |
| Input Capacitance (Ciss) Max | — | 1530 pF at 25 V |
| Power Dissipation (PD) Max at TA=25 C | — | 2.5 W |
| MSL 等级 | — | 1 (unlimited) |
| RoHS 状态 | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Estimated EOL Date | — | 2027 |
| ECCN | — | EAR99 |